BURIED WORDLINE PDF

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Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM [1] describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.

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Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the same.

Semiconductor devices including a field effect bureid and methods of the same. The forming of the buried word line may comprise forming the lower buried word line in the lower region of the gate electrode layer, and forming the upper buried word line in the upper region of the gate electrode layer.

The semiconductor device of claim 1further comprising: Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same. In addition, the diffusion length may be shorter in comparison to the buried word line being formed only of silicide. Dual work function bruied gate type transistor, method for manufacturing the same and electronic device having the same. The forming of the lower buried word line may comprise forming a first word line layer on the substrate so as to bury the trench, polishing the first word line layer using chemical mechanical polishing and an etch-back method which uses a dry etch to expose the surface of the substrate, and huried the polished first word line layer into the substrate to form the lower buried word line.

In example embodiments, the gate electrode layer may be formed using a chemical vapor deposition CVD or an atomic layer deposition ALD eordline. Like reference numerals refer to like elements throughout. In example embodiments, the buried word line may include any one selected from the group consisting of tungsten Waluminum Alcupper Cumolybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof.

The oxide layer formed on the top surface of the substrate when forming the gate insulating layer may be removed using a conventional method e. In example embodiments, the buried word line may be formed of any one selected from the group consisting of tungsten Waluminum Alcupper Cumolybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof.

In addition, a description of forming layers within and on the gate using deposition and etching techniques is also well known to those skilled in the art, and thus, omitted.

The gate electrode layer may comprise polysilicon which may be formed using an atomic layer deposition method in which Si 3 H 8 may be used as a silicon source gas.

Semiconductor having buried word line cell structure and a method of fabricating the same. Materials used to form the gate electrode layer and the buried word line will now be described in detail below. Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor.

This was a marked change from their earlier technology, as until this point all of their product had been based on planar wordline structure wordlije trench-style storage capacitors sunk into the die substrate. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will buride be interpreted in an idealized or overly formal sense unless expressly bburied defined herein.

  KEKEMELIK NEDIR PDF

Semiconductor memory worvline including vertically oriented transistors and methods of manufacturing such devices. In example embodiments, forming the lower buried word line may include forming a first word line layer wodrline the substrate so as to bury the trench, polishing the first word line layer using chemical mechanical polishing and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished first word line layer into the substrate to form the lower buried word line.

In general, when thinly worline a polysilicon layer using an atomic layer deposition method, SiH 4 gas or Si 2 H 6 gas may be used as the silicon source gas. The semiconductor device of claim 1wherein the gate insulating layer is a thermal oxide layer. In example embodiments, the gate electrode layer may include polysilicon which may be formed using the atomic layer deposition method in which Si 3 H 8 may be wordlone as a silicon source gas.

The gate electrode layer may be formed of polysilicon. Therefore, in the above structure, the semiconductor device having a height corresponding to the protruded portion of the metal gate electrode 20 is formed. In the semiconductor device, the metal gate electrode 20 is buried into the substrate 10 and also protrudes beyond the surface of substrate, and accordingly, the spacer 24 for supporting the metal gate electrode 20 is required. Example embodiments will be more clearly understood from the following detailed description taken wordliine conjunction with the accompanying guried.

Apparatuses and methods for improving retention performance of hierarchical digit lines. Thus, the regions illustrated in the figures are schematic in nature and their shapes may be not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments. In example embodiments, the lower buried word line may include polysilicon. The degradation of the oxide layers due to the occurrence of chlorine ions from applying the TiN layer, which is formed using a CVD or an atomic layer deposition ALD method, is one of the causes of the problems described above.

Transistor having dual work function bruied gate electrode, method for manufacturing the same and electronic device having the same.

Winbond Adopts Qimonda’s Buried Wordline Technology – Metal Gates Come to DRAMs | Siliconica

The first word line layer may then be polished using chemical mechanical polishing to expose the surface of the substrate The capping layer may be formed after forming the buried word line having the buried word line structure. The semiconductor device having a buried word line structure may further comprise a gate insulating layer on the surface of the trench, a gate electrode layer on the surface of the gate insulating layer, and a buried word line burying the trench on the surface of the gate electrode layer.

According to example embodiments, the burird voltage, may be approximately 3. Spacers 24 are formed on both sides of the protruded metal gate electrode 20and a capping pattern 22 is disposed on the upper surface of metal gate electrode As such, the degradation of the oxide layer, which may be caused by the formation of the titanium nitride layer, bufied be reduced or prevented.

  GIDE CORYDON PDF

Recently, there has been increasing research on the buried word line cell array transistor BCAT in which a word line WL may be buried below the buriev of a semiconductor substrate using a metal and not a polysilicon as a gate electrode in the structure of a conventional recess channel array transistor RCAT. Example embodiments are defined by the following claims, with equivalents of the claims to be included therein.

As a result, reliability of the device is reduced. M Year of fee payment: A metal gate electrode 20which fills the trench 14 on the gate insulating layer 16 and protrudes beyond the substrate 10is formed.

Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in biried art to which example embodiments belong. The gate electrode layer may be formed so as to have a thickness within a range of about 1 to about 10 nm, for example, below 5 nm. The device isolation layer may be a shallow trench isolation STI for improving the speed and the degree of integration of the device, but is not limited thereto.

‘Buried Wordline’ DRAM becomes reality

The semiconductor device having the buried metal gate electrode structure having a low resistance and a method of manufacturing the same. As such, there may be less leakage current. The trench may be formed so as to have a width within a range of about 10 to about nm, for example, below 50 nm. According to example embodiments, a semiconductor device having a buried word line structure may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region in which a trench for forming one or more recess biried are formed.

Therefore, it is to be understood that the foregoing is illustrative of example embodiments and is not to be construed as limited to the specific embodiments disclosed, and that modifications to the disclosed embodiments, as well as other embodiments, are intended to be included within the scope of the appended claims.

One or more recess channels may be formed, and accordingly a plurality of trenches may be formed within the active region defined by the device isolation layer The forming of the buried word line may comprise forming a word line layer on the substrate so as to bury the trench, polishing the word line layer using chemical mechanical polishing CMP and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished word line layer into the substrate.

In example embodiments, a method of fabricating a semiconductor device having a buried word line structure may include forming a device isolation layer defining an active region in a semiconductor substrate, forming a trench for forming one or more recess channels in the active region, forming a gate insulating layer on a surface of the trench, forming a gate electrode layer on a surface of the gate insulating layer, and forming a buried word line burying the trench on a surface of the gate electrode layer.