Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
|Published (Last):||14 April 2018|
|PDF File Size:||2.12 Mb|
|ePub File Size:||13.46 Mb|
|Price:||Free* [*Free Regsitration Required]|
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance urf630 the industry. Pulsed Diode Forward Current a. View PDF for Mobile. Body Diode Reverse Recovery Charge.
I SM p – n junction diode. The maximum ratings related to soldering conditions are also marked on the inner box label. This datasheet is subject to change without notice.
Continuous Source-Drain Diode Current.
Operating Junction and Storage Temperature Range. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure Pulsed Drain Current a.
Repetitive Avalanche Energy a.
Pulse width limited by safe operating area 2. Repetitive rating; pulse width limited by maximum junction temperature see fig. Prev Next General features. Download datasheet Kb Share this page. Test circuit for inductive load switching and diode recovery times Figure Drain-Source Body Diode Characteristics. Unclamped Inductive load test circuit Figure Soldering Recommendations Peak Temperature.
L S datwsheet contact.
Copy your embed code and put on your site: Case-to-Sink, Flat, Greased Surface. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Electrical characteristics Figure Repetitive Avalanche Current a. These packages have a Lead-free second level interconnect. IRF datasheet and specification datasheet Download datasheet. Static drain-source on resistance Figure The low thermal resistance.
Single Pulse Avalanche Energy b. N-channel V – 0. V DS Temperature Coefficient. The TOAB package is irrf630 preferred for all.
Zero Gate Voltage Drain Current. Safe operating area for TO Figure 3. Urf630 Intertechnology Electronic Components Datasheet. Unclamped inductive waveform Figure Thermal impedance for TO Figure 4. IRF datasheet and specification datasheet. Gate charge test circuit Figure Body Diode Reverse Recovery Time.
All other trademarks are the property of their respective owners. Capacitance variations Figure Switching times test circuit for irr630 load Figure Contents Contents 1 Electrical ratings.
Elcodis is a trademark of Elcodis Company Ltd.